Preliminary Program

Invited speakers (confirmed)

Mowafak Al Jassim

Dr. Mowafak Al Jassim
Microscopy and Imaging Group, NREL. Colorado (USA)
Defects on CIGS
Jordi Arbiol

Prof. Jordi Arbiol
ICREA & Institut Català de Nanociència i Nanotecnologia (ICN2), CSIC and The Barcelona Institute of Science and Technology (BIST). Barcelona (Spain)
Free-standing semiconductor nanostructures: how crystal defects can modulate the final 3D morphology and properties
Matthias Bickermann

Prof. Matthias Bickermann
Leibniz Institute for Crystal Growth (IKZ) & Technical University Berlin, Institute for Chemistry. Berlin (Germany)
Defects in AlN bulk crystal substrates for UV LEDs and lasers
Xu Ke
Prof. Xu Ke

Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Science. Suzhou (China)
Growth and characterization of 2~4 inch bulk GaN with low dislocation density
Saulius Marcinkevicius

Prof. Saulius Marcinkevicius
Department of Materials and Nano Physics, Royal Institute of Technlogy (KTH). Stockholm (Sweden)
Time-resolved scanning near-field optical spectroscopy: application for InGaN quantum wells
Julita Smalc-Koziorowska

Dr. Julita Smalc-Koziorowska
Institute of High Pressure Physics “Unipress”, Polish Academy of Sciences. Warsaw (Poland)
TEM characterization of nitride quantum structures and devices
Thorsten Trupke

Prof. Thorsten Trupke
Photovoltaic & Renewable Energy Engineering. University of New South Wales. Sydney (Australia)
PL imaging on mc Si
Osamu Ueda

Prof. Osamu Ueda
Kanazawa Institute of Technology & Graduate School of Engineering. Tokyo (Japan)
Gradual degradation in III-V and GaN-related optical devices
Xuegong Yu

Prof. Xuegong Yu
State Key Lab of Silicon Materials, Zhejiang University. Hangzhou (China)
Graphene-silicon solar cell
Enrico Zanoni

Prof. Enrico Zanoni
Dipartimento di Ingegneria dell’Informazione. Universita’ di Padova. Padova (Italy)
Dynamic on-resistance effects and failure mechanisms related to the epitaxial layers of GaN-on-Si power switching transistors
Leonard Brillson

Prof. Leonard Brillson
The Ohio State University, Columbus, Ohio (USA)
Defect Characterization, Imaging, and Control in Wide Band Semiconductors and Devices