Papers are sought for both oral presentations and posters, covering the fundamental aspects of the field of defect-recognition, imaging and physics in semiconductors.
Physics of point and extended defects in semiconductors: origin, electrical, optical and magnetic properties of defects.
Diagnostics techniques of crystal growth and processing of semiconductor materials (in-situ and process control).
Device imaging and mapping to evaluate performance and reliability.
Defect analysis in degraded optoelectronic and electronic devices
Imaging techniques and instruments (scanning microscopies, x-ray, electron beam, noncontact electrical, optical and thermal imaging techniques, etc.)
New frontiers of atomic-scale-defect assessment (STM, AFM, SNOM, ballistic electron energy microscopy, TEM, etc.)
New approaches for multi-physic-parameter characterization with nano-scale space resolution.
Goup IV semiconductors (Si, Ge, Diamond, Graphene etc.)
III-V compound semiconductors (GaAs based materials and their quantum structures and dilute magnetics, etc.)
Wide band-gap semiconductors (Nitride semiconductors, SiC and ZnO etc.)
Novel device structures
Novel two dimensional semiconductors